- 您现在的位置：买卖IC网 > Sheet目录121 > BAS416,115 (NXP Semiconductors)DIODE SW LO-LEAK 85V 200MA SC-76
     2004 Jan 26 5 NXP Semiconductors Product data sheet Low-leakage diode BAS416 2handbook, halfpage10 10 3 0 150 200T ( C) j o 50 MLB754 100 10 1 10 1 10 2 IR (nA) (1) (2) Fig.5 Reverse current as a function of junction temperature. VR = 75 V. (1) Maximum values. (2) Typical values. 2handbook, halfpage 0 010205 15 VR (V) 1 MBG526 Cd (pF) Fig.6 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tj = 25 °C. Fig.7 Reverse recovery voltage test circuit and waveforms. (1) IR = 1 mA. Input signal: reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration t p = 100 ns; duty factor δ = 0.05; Oscilloscope: rise time tr = 0.35 ns. handbook, full pagewidth trr (1) IF t output signal tr t tp 10% 90% VR input signal V = V I x RRF S R = 50S ? IF D.U.T. R = 50i ? SAMPLING OSCILLOSCOPE MGA881 |